FQB7N60TM
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onsemi FQB7N60TM

Manufacturer No:
FQB7N60TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB7N60TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 7.4A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1430 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 142W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$1.27
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Similar Products

Part Number FQB7N60TM FQB7N80TM   FQB1N60TM   FQB2N60TM   FQB5N60TM   FQB6N60TM   FQB7N10TM   FQB7N20TM   FQB7N30TM  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V 600 V 600 V 600 V 600 V 100 V 200 V 300 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) 6.6A (Tc) 1.2A (Tc) 2.4A (Tc) 5A (Tc) 6.2A (Tc) 7.3A (Tc) 6.6A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.7A, 10V 1.5Ohm @ 3.3A, 10V 11.5Ohm @ 600mA, 10V 4.7Ohm @ 1.2A, 10V 2Ohm @ 2.5A, 10V 1.5Ohm @ 3.1A, 10V 350mOhm @ 3.65A, 10V 690mOhm @ 3.3A, 10V 700mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 52 nC @ 10 V 6 nC @ 10 V 11 nC @ 10 V 20 nC @ 10 V 25 nC @ 10 V 7.5 nC @ 10 V 10 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±25V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1430 pF @ 25 V 1850 pF @ 25 V 150 pF @ 25 V 350 pF @ 25 V 730 pF @ 25 V 1000 pF @ 25 V 250 pF @ 25 V 400 pF @ 25 V 610 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 142W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 40W (Tc) 3.13W (Ta), 64W (Tc) 3.13W (Ta), 120W (Tc) 3.13W (Ta), 130W (Tc) 3.75W (Ta), 40W (Tc) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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