FQB7N20TM
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onsemi FQB7N20TM

Manufacturer No:
FQB7N20TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB7N20TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 6.6A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:690mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB7N20TM FQB7N30TM   FQB7P20TM   FQB7N80TM   FQB7N60TM   FQB4N20TM   FQB5N20TM   FQB7N10TM   FQB7N20LTM  
Manufacturer onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Last Time Buy Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 300 V 200 V 800 V 600 V 200 V 200 V 100 V 200 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) 7A (Tc) 7.3A (Tc) 6.6A (Tc) 7.4A (Tc) 3.6A (Tc) 4.5A (Tc) 7.3A (Tc) 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 690mOhm @ 3.3A, 10V 700mOhm @ 3.5A, 10V 690mOhm @ 3.65A, 10V 1.5Ohm @ 3.3A, 10V 1Ohm @ 3.7A, 10V 1.4Ohm @ 1.8A, 10V 1.2Ohm @ 2.25A, 10V 350mOhm @ 3.65A, 10V 750mOhm @ 3.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 17 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 38 nC @ 10 V 6.5 nC @ 10 V 7.5 nC @ 10 V 7.5 nC @ 10 V 9 nC @ 5 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V 610 pF @ 25 V 770 pF @ 25 V 1850 pF @ 25 V 1430 pF @ 25 V 220 pF @ 25 V 270 pF @ 25 V 250 pF @ 25 V 500 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 90W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 142W (Tc) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 52W (Tc) 3.75W (Ta), 40W (Tc) 3.13W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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