FQB5N30TM
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onsemi FQB5N30TM

Manufacturer No:
FQB5N30TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB5N30TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 5.4A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number FQB5N30TM FQB5N40TM   FQB7N30TM   FQB5N60TM   FQB5N90TM   FQB5N50TM   FQB5N80TM   FQB2N30TM   FQB3N30TM   FQB5N20TM  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 400 V 300 V 600 V 900 V 500 V 800 V 300 V 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 4.5A (Tc) 7A (Tc) 5A (Tc) 5.4A (Tc) 4.5A (Tc) 4.8A (Tc) 2.1A (Tc) 3.2A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V 1.6Ohm @ 2.25A, 10V 700mOhm @ 3.5A, 10V 2Ohm @ 2.5A, 10V 2.3Ohm @ 2.7A, 10V 1.8Ohm @ 2.25A, 10V 2.6Ohm @ 2.4A, 10V 3.7Ohm @ 1.05A, 10V 2.2Ohm @ 1.6A, 10V 1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 20 nC @ 10 V 40 nC @ 10 V 17 nC @ 10 V 33 nC @ 10 V 5 nC @ 10 V 7 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V 730 pF @ 25 V 1550 pF @ 25 V 610 pF @ 25 V 1250 pF @ 25 V 130 pF @ 25 V 230 pF @ 25 V 270 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 120W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 40W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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