FQB5N20TM
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onsemi FQB5N20TM

Manufacturer No:
FQB5N20TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB5N20TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 4.5A D2PAK
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number FQB5N20TM FQB5N40TM   FQB5N60TM   FQB5N90TM   FQB5P20TM   FQB7N20TM   FQB5N30TM   FQB5N50TM   FQB5N80TM   FQB4N20TM   FQB5N20LTM  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 400 V 600 V 900 V 200 V 200 V 300 V 500 V 800 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4.5A (Tc) 5A (Tc) 5.4A (Tc) 4.8A (Tc) 6.6A (Tc) 5.4A (Tc) 4.5A (Tc) 4.8A (Tc) 3.6A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V 1.6Ohm @ 2.25A, 10V 2Ohm @ 2.5A, 10V 2.3Ohm @ 2.7A, 10V 1.4Ohm @ 2.4A, 10V 690mOhm @ 3.3A, 10V 900mOhm @ 2.7A, 10V 1.8Ohm @ 2.25A, 10V 2.6Ohm @ 2.4A, 10V 1.4Ohm @ 1.8A, 10V 1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 13 nC @ 10 V 20 nC @ 10 V 40 nC @ 10 V 13 nC @ 10 V 10 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 33 nC @ 10 V 6.5 nC @ 10 V 6.2 nC @ 5 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V 460 pF @ 25 V 730 pF @ 25 V 1550 pF @ 25 V 430 pF @ 25 V 400 pF @ 25 V 430 pF @ 25 V 610 pF @ 25 V 1250 pF @ 25 V 220 pF @ 25 V 325 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 52W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 120W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 75W (Tc) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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