FQB4N90TM
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onsemi FQB4N90TM

Manufacturer No:
FQB4N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB4N90TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 4.2A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB4N90TM FQB6N90TM   FQB5N90TM   FQB2N90TM   FQB3N90TM   FQB4N20TM   FQB4N50TM   FQB4N80TM  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 200 V 500 V 800 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) 5.8A (Tc) 5.4A (Tc) 2.2A (Tc) 3.6A (Tc) 3.6A (Tc) 3.4A (Tc) 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2.1A, 10V 1.9Ohm @ 2.9A, 10V 2.3Ohm @ 2.7A, 10V 7.2Ohm @ 1.1A, 10V 4.25Ohm @ 1.8A, 10V 1.4Ohm @ 1.8A, 10V 2.7Ohm @ 1.7A, 10V 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 52 nC @ 10 V 40 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 6.5 nC @ 10 V 13 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V 1880 pF @ 25 V 1550 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 220 pF @ 25 V 460 pF @ 25 V 880 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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