FQB4N90TM
  • Share:

onsemi FQB4N90TM

Manufacturer No:
FQB4N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB4N90TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 4.2A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
608

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB4N90TM FQB6N90TM   FQB5N90TM   FQB2N90TM   FQB3N90TM   FQB4N20TM   FQB4N50TM   FQB4N80TM  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 200 V 500 V 800 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) 5.8A (Tc) 5.4A (Tc) 2.2A (Tc) 3.6A (Tc) 3.6A (Tc) 3.4A (Tc) 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 2.1A, 10V 1.9Ohm @ 2.9A, 10V 2.3Ohm @ 2.7A, 10V 7.2Ohm @ 1.1A, 10V 4.25Ohm @ 1.8A, 10V 1.4Ohm @ 1.8A, 10V 2.7Ohm @ 1.7A, 10V 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 52 nC @ 10 V 40 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 6.5 nC @ 10 V 13 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V 1880 pF @ 25 V 1550 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 220 pF @ 25 V 460 pF @ 25 V 880 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTLJS5D0N03CTAG
NTLJS5D0N03CTAG
onsemi
MOSFET N-CH 30V 11.2A 6PQFN
IRFB4615PBF
IRFB4615PBF
Infineon Technologies
MOSFET N-CH 150V 35A TO220AB
FQPF18N20V2
FQPF18N20V2
Fairchild Semiconductor
MOSFET N-CH 200V 18A TO220F
TSM032NH04LCR RLG
TSM032NH04LCR RLG
Taiwan Semiconductor Corporation
40V, 81A, SINGLE N-CHANNEL POWER
BUK661R8-30C,118
BUK661R8-30C,118
NXP USA Inc.
MOSFET N-CH 30V 120A D2PAK
AOTF7T60PL
AOTF7T60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 7A TO220-3F
MCU60N04A-TP
MCU60N04A-TP
Micro Commercial Co
N-CHANNEL MOSFET, DPAK
SPI08N50C3XK
SPI08N50C3XK
Infineon Technologies
N-CHANNEL POWER MOSFET
BUK9Y12-55B,115
BUK9Y12-55B,115
Nexperia USA Inc.
MOSFET N-CH 55V 61.8A LFPAK56
SIHF30N60E-GE3
SIHF30N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 29A TO220
IPB05N03LAT
IPB05N03LAT
Infineon Technologies
MOSFET N-CH 25V 80A TO263-3
FCA16N60_F109
FCA16N60_F109
onsemi
MOSFET N-CH 600V 16A TO3PN

Related Product By Brand

NTVB170SC-L
NTVB170SC-L
onsemi
THYRISTOR 170V 100A DO214AA
MBRS4201T3G
MBRS4201T3G
onsemi
DIODE SCHOTTKY 200V 4A SMC
NSR05F20NXT5G
NSR05F20NXT5G
onsemi
DIODE SCHOTTKY 20V 500MA 2DSN
EMD4DXV6T5
EMD4DXV6T5
onsemi
SMALL SIGNAL BIPOLAR TRANSISTOR
CPH6603-TL-E
CPH6603-TL-E
onsemi
P-CHANNEL SILICON MOSFET
BFR30LT1
BFR30LT1
onsemi
JFET N-CH 225MW SOT23
NBVSPA018LN1TAG
NBVSPA018LN1TAG
onsemi
IC OSC VCXO 155.52MHZ 6CLCC
MC3303DG
MC3303DG
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
74ACT715RPC
74ACT715RPC
onsemi
IC VIDEO SYNC 20DIP
NLV14503BDR2G
NLV14503BDR2G
onsemi
IC BUFFER NON-INVERT 18V 16SOIC
DM74ALS86M
DM74ALS86M
onsemi
IC GATE XOR 4CH 2-INP 14SOIC
NLX1G11CMX1TCG
NLX1G11CMX1TCG
onsemi
IC GATE AND 1CH 3-INP 6ULLGA