FQB4N80TM
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onsemi FQB4N80TM

Manufacturer No:
FQB4N80TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB4N80TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3.9A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB4N80TM FQB7N80TM   FQB6N80TM   FQB4N90TM   FQB5N80TM   FQB2N80TM   FQB3N80TM   FQB4N20TM   FQB4N50TM  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 900 V 800 V 800 V 800 V 200 V 500 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) 6.6A (Tc) 5.8A (Tc) 4.2A (Tc) 4.8A (Tc) 2.4A (Tc) 3A (Tc) 3.6A (Tc) 3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V 1.5Ohm @ 3.3A, 10V 1.95Ohm @ 2.9A, 10V 3.3Ohm @ 2.1A, 10V 2.6Ohm @ 2.4A, 10V 6.3Ohm @ 900mA, 10V 5Ohm @ 1.5A, 10V 1.4Ohm @ 1.8A, 10V 2.7Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 52 nC @ 10 V 31 nC @ 10 V 30 nC @ 10 V 33 nC @ 10 V 15 nC @ 10 V 19 nC @ 10 V 6.5 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V 1850 pF @ 25 V 1500 pF @ 25 V 1100 pF @ 25 V 1250 pF @ 25 V 550 pF @ 25 V 690 pF @ 25 V 220 pF @ 25 V 460 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 85W (Tc) - 3.13W (Ta), 45W (Tc) 3.13W (Ta), 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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