FQB4N50TM
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onsemi FQB4N50TM

Manufacturer No:
FQB4N50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB4N50TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 3.4A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB4N50TM FQB6N50TM   FQB9N50TM   FQB4N80TM   FQB5N50TM   FQB4N90TM   FQB2N50TM   FQB4N20TM  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 800 V 500 V 900 V 500 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Tc) 5.5A (Tc) 9A (Tc) 3.9A (Tc) 4.5A (Tc) 4.2A (Tc) 2.1A (Tc) 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.7A, 10V 1.3Ohm @ 2.8A, 10V 730mOhm @ 4.5A, 10V 3.6Ohm @ 1.95A, 10V 1.8Ohm @ 2.25A, 10V 3.3Ohm @ 2.1A, 10V 5.3Ohm @ 1.05A, 10V 1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 22 nC @ 10 V 36 nC @ 10 V 25 nC @ 10 V 17 nC @ 10 V 30 nC @ 10 V 8 nC @ 10 V 6.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 25 V 790 pF @ 25 V 1450 pF @ 25 V 880 pF @ 25 V 610 pF @ 25 V 1100 pF @ 25 V 230 pF @ 25 V 220 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 147W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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