FQB4N25TM
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onsemi FQB4N25TM

Manufacturer No:
FQB4N25TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB4N25TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 3.6A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB4N25TM FQB8N25TM   FQB6N25TM   FQB9N25TM   FQB4P25TM   FQB3N25TM   FQB4N20TM  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V 250 V 250 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 8A (Tc) 5.5A (Tc) 9.4A (Tc) 4A (Tc) 2.8A (Tc) 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.75Ohm @ 1.8A, 10V 550mOhm @ 4A, 10V 1Ohm @ 2.75A, 10V 420mOhm @ 4.7A, 10V 2.1Ohm @ 2A, 10V 2.2Ohm @ 1.4A, 10V 1.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V 15 nC @ 10 V 8.5 nC @ 10 V 20 nC @ 10 V 14 nC @ 10 V 5.2 nC @ 10 V 6.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 530 pF @ 25 V 300 pF @ 25 V 700 pF @ 25 V 420 pF @ 25 V 170 pF @ 25 V 220 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 52W (Tc) 3.13W (Ta), 87W (Tc) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 90W (Tc) 3.13W (Ta), 75W (Tc) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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