FQB3N90TM
  • Share:

onsemi FQB3N90TM

Manufacturer No:
FQB3N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB3N90TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 3.6A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.25Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB3N90TM FQB6N90TM   FQB5N90TM   FQB4N90TM   FQB2N90TM   FQB3N30TM   FQB3N40TM   FQB3N80TM  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 300 V 400 V 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 5.8A (Tc) 5.4A (Tc) 4.2A (Tc) 2.2A (Tc) 3.2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.25Ohm @ 1.8A, 10V 1.9Ohm @ 2.9A, 10V 2.3Ohm @ 2.7A, 10V 3.3Ohm @ 2.1A, 10V 7.2Ohm @ 1.1A, 10V 2.2Ohm @ 1.6A, 10V 3.4Ohm @ 1.25A, 10V 5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 52 nC @ 10 V 40 nC @ 10 V 30 nC @ 10 V 15 nC @ 10 V 7 nC @ 10 V 7.5 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1880 pF @ 25 V 1550 pF @ 25 V 1100 pF @ 25 V 500 pF @ 25 V 230 pF @ 25 V 230 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 55W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

CSD17312Q5
CSD17312Q5
Texas Instruments
MOSFET N-CH 30V 38A/100A 8VSON
SI2319DDS-T1-GE3
SI2319DDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 2.7A/3.6A SOT23
IRFD224PBF
IRFD224PBF
Vishay Siliconix
MOSFET N-CH 250V 630MA 4DIP
TSM2N7002KCU
TSM2N7002KCU
Taiwan Semiconductor Corporation
60V, 0.24A, SINGLE N-CHANNEL POW
DMT6012LFV-7
DMT6012LFV-7
Diodes Incorporated
MOSFET N-CH 60V 43.3A PWRDI3333
IXFL32N120P
IXFL32N120P
IXYS
MOSFET N-CH 1200V 24A I5PAK
IRFBF30STRR
IRFBF30STRR
Vishay Siliconix
MOSFET N-CH 900V 3.6A D2PAK
NTP13N10
NTP13N10
onsemi
MOSFET N-CH 100V 13A TO220AB
FQB19N10TM
FQB19N10TM
onsemi
MOSFET N-CH 100V 19A D2PAK
SI2305DS-T1-E3
SI2305DS-T1-E3
Vishay Siliconix
MOSFET P-CH 8V 3.5A SOT23-3
BSO220N03MSGXUMA1
BSO220N03MSGXUMA1
Infineon Technologies
MOSFET N-CH 30V 7A 8DSO
HAT2192WP-EL-E
HAT2192WP-EL-E
Renesas Electronics America Inc
MOSFET N-CH 250V 10A 8WPAK

Related Product By Brand

1SMB170AT3G
1SMB170AT3G
onsemi
TVS DIODE 170VWM 275VC SMB
1SMA18CAT3
1SMA18CAT3
onsemi
TVS DIODE 18VWM 29.2VC SMA
SZMMSZ5250BT1G
SZMMSZ5250BT1G
onsemi
DIODE ZENER 20V 500MW SOD123
FSB50250BS
FSB50250BS
onsemi
IPM 500V 2A
NDD60N745U1-1G
NDD60N745U1-1G
onsemi
NDD60N745 - POWER MOSFET 600V 6.
FQP50N06
FQP50N06
onsemi
MOSFET N-CH 60V 50A TO220-3
FDMC6675BZ
FDMC6675BZ
onsemi
MOSFET P-CH 30V 9.5A/20A 8MLP
MC74ACT540DTR2
MC74ACT540DTR2
onsemi
IC BUFFER INVERT 5.5V 20TSSOP
MC74LCXU04DT
MC74LCXU04DT
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC74LVX259DTG
MC74LVX259DTG
onsemi
IC LATCH AADDRESS 8BIT 16-TSSOP
LB11872H-TLM-E
LB11872H-TLM-E
onsemi
IC MOTOR DRIVER 10V-28V 28HSOP
MC7812ACD2TR4G
MC7812ACD2TR4G
onsemi
IC REG LINEAR 12V 1A D2PAK