FQB3N80TM
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onsemi FQB3N80TM

Manufacturer No:
FQB3N80TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB3N80TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB3N80TM FQB4N80TM   FQB7N80TM   FQB6N80TM   FQB3N90TM   FQB5N80TM   FQB2N80TM   FQB3N30TM   FQB3N40TM  
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 900 V 800 V 800 V 300 V 400 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3.9A (Tc) 6.6A (Tc) 5.8A (Tc) 3.6A (Tc) 4.8A (Tc) 2.4A (Tc) 3.2A (Tc) 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 1.5A, 10V 3.6Ohm @ 1.95A, 10V 1.5Ohm @ 3.3A, 10V 1.95Ohm @ 2.9A, 10V 4.25Ohm @ 1.8A, 10V 2.6Ohm @ 2.4A, 10V 6.3Ohm @ 900mA, 10V 2.2Ohm @ 1.6A, 10V 3.4Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 25 nC @ 10 V 52 nC @ 10 V 31 nC @ 10 V 26 nC @ 10 V 33 nC @ 10 V 15 nC @ 10 V 7 nC @ 10 V 7.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V 880 pF @ 25 V 1850 pF @ 25 V 1500 pF @ 25 V 910 pF @ 25 V 1250 pF @ 25 V 550 pF @ 25 V 230 pF @ 25 V 230 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) - 3.13W (Ta), 130W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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