FQB33N10LTM
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onsemi FQB33N10LTM

Manufacturer No:
FQB33N10LTM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB33N10LTM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 33A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 127W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB33N10LTM FQB33N10TM   FQB13N10LTM  
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 33A (Tc) 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 16.5A, 10V 52mOhm @ 16.5A, 10V 180mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 5 V 51 nC @ 10 V 12 nC @ 5 V
Vgs (Max) ±20V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 1500 pF @ 25 V 520 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.75W (Ta), 127W (Tc) 3.75W (Ta), 127W (Tc) 3.75W (Ta), 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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