FQB2N90TM
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onsemi FQB2N90TM

Manufacturer No:
FQB2N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB2N90TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 2.2A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.2Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number FQB2N90TM FQB6N90TM   FQB5N90TM   FQB2NA90TM   FQB3N90TM   FQB4N90TM   FQB2N30TM   FQB2N50TM   FQB2N60TM   FQB2N80TM  
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 900 V 300 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) 5.8A (Tc) 5.4A (Tc) 2.8A (Tc) 3.6A (Tc) 4.2A (Tc) 2.1A (Tc) 2.1A (Tc) 2.4A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.2Ohm @ 1.1A, 10V 1.9Ohm @ 2.9A, 10V 2.3Ohm @ 2.7A, 10V 5.8Ohm @ 1.4A, 10V 4.25Ohm @ 1.8A, 10V 3.3Ohm @ 2.1A, 10V 3.7Ohm @ 1.05A, 10V 5.3Ohm @ 1.05A, 10V 4.7Ohm @ 1.2A, 10V 6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 52 nC @ 10 V 40 nC @ 10 V 20 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 5 nC @ 10 V 8 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 1880 pF @ 25 V 1550 pF @ 25 V 680 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 130 pF @ 25 V 230 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 107W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 40W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 64W (Tc) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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