FQB2N30TM
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onsemi FQB2N30TM

Manufacturer No:
FQB2N30TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB2N30TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 2.1A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB2N30TM FQB3N30TM   FQB7N30TM   FQB2N50TM   FQB5N30TM   FQB2N90TM   FQB2N60TM   FQB2N80TM  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 300 V 500 V 300 V 900 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.1A (Tc) 3.2A (Tc) 7A (Tc) 2.1A (Tc) 5.4A (Tc) 2.2A (Tc) 2.4A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.05A, 10V 2.2Ohm @ 1.6A, 10V 700mOhm @ 3.5A, 10V 5.3Ohm @ 1.05A, 10V 900mOhm @ 2.7A, 10V 7.2Ohm @ 1.1A, 10V 4.7Ohm @ 1.2A, 10V 6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V 7 nC @ 10 V 17 nC @ 10 V 8 nC @ 10 V 13 nC @ 10 V 15 nC @ 10 V 11 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 25 V 230 pF @ 25 V 610 pF @ 25 V 230 pF @ 25 V 430 pF @ 25 V 500 pF @ 25 V 350 pF @ 25 V 550 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 40W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 55W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 64W (Tc) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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