FQB1P50TM
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onsemi FQB1P50TM

Manufacturer No:
FQB1P50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB1P50TM Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 500V 1.5A D2PAK
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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$1.51
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Similar Products

Part Number FQB1P50TM FQB3P50TM  
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10.5Ohm @ 750mA, 10V 4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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