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| Part Number | FQB16N25TM | FQB6N25TM | FQB16N15TM | FQB16N25CTM |
|---|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V | 250 V | 150 V | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | 5.5A (Tc) | 16.4A (Tc) | 15.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V | 1Ohm @ 2.75A, 10V | 160mOhm @ 8.2A, 10V | 270mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 8.5 nC @ 10 V | 30 nC @ 10 V | 53.5 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±25V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | 300 pF @ 25 V | 910 pF @ 25 V | 1080 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) | 3.13W (Ta), 63W (Tc) | 3.75W (Ta), 108W (Tc) | 3.13W (Ta), 139W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
