FQB13N06TM
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onsemi FQB13N06TM

Manufacturer No:
FQB13N06TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FQB13N06TM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 13A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:135mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FQB13N06TM FQB13N06LTM  
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 6.5A, 10V 110mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 6.4 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 45W (Tc) 3.75W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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