FQAF17N40
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onsemi FQAF17N40

Manufacturer No:
FQAF17N40
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FQAF17N40 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 12.2A TO3PF
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:12.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:270mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
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Similar Products

Part Number FQAF17N40 FQA17N40   FQAF11N40  
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 12.2A (Tc) 17.2A (Tc) 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 6.1A, 10V 270mOhm @ 8.6A, 10V 480mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 25 V 2300 pF @ 25 V 1400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 100W (Tc) 190W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3PF TO-3P TO-3PF
Package / Case TO-3P-3 Full Pack TO-3P-3, SC-65-3 TO-3P-3 Full Pack

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