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| Part Number | FQA19N20C | FQA19N20L |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 21.8A (Tc) | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10.9A, 10V | 140mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | 35 nC @ 5 V |
| Vgs (Max) | ±30V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V | 2200 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 180W (Tc) | 190W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-3P | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
