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| Part Number | FQA11N90C | FQA11N90 |
|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | 11.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.5A, 10V | 960mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 94 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | 3500 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-3P | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
