onsemi-FMBM5551-SB16001 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	160V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	700mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	SuperSOT™-6

onsemi FMBM5551-SB16001