onsemi-FJPF5027RYDTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	800 V
Vce Saturation (Max) @ Ib, Ic:	2V @ 300mA, 1.5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 200mA, 5V
Power - Max:	40 W
Frequency - Transition:	15MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F-3

onsemi FJPF5027RYDTU