onsemi-FJP2160DTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	800 V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 330mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 400mA, 3V
Power - Max:	100 W
Frequency - Transition:	5MHz
Operating Temperature:	-55°C ~ 125°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

onsemi FJP2160DTU