onsemi-FJNS7565BU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5 A
Voltage - Collector Emitter Breakdown (Max):	10 V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 60mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	450 @ 500mA, 2V
Power - Max:	550 mW
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Short Body
Supplier Device Package:	TO-92S

onsemi FJNS7565BU