FJNS4212RTA
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onsemi FJNS4212RTA

Manufacturer No:
FJNS4212RTA
Manufacturer:
onsemi
Package:
Tape & Box (TB)
Datasheet:
FJNS4212RTA Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS PNP 300MW TO92S
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200 MHz
Power - Max:300 mW
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Short Body
Supplier Device Package:TO-92S
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In Stock

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Similar Products

Part Number FJNS4212RTA FJNS4213RTA   FJNS3212RTA   FJNS4202RTA  
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 50 V 40 V 50 V
Resistor - Base (R1) 47 kOhms 2.2 kOhms 47 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 47 kOhms - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 68 @ 5mA, 5V 100 @ 1mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA 300mV @ 500µA, 10mA 300mV @ 1mA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 200 MHz 200 MHz 250 MHz 200 MHz
Power - Max 300 mW 300 mW 300 mW 300 mW
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Short Body TO-226-3, TO-92-3 Short Body TO-226-3, TO-92-3 Short Body TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S TO-92S TO-92S TO-92S

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