onsemi-FJN4313RBU - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes | Izzition

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Part Number	FJN4313RBU	FJN4314RBU	FJN3313RBU	FJN4303RBU	FJN4310RBU	FJN4311RBU	FJN4312RBU
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
Transistor Type	PNP - Pre-Biased	PNP - Pre-Biased	NPN - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	40 V	40 V	40 V
Resistor - Base (R1)	2.2 kOhms	4.7 kOhms	2.2 kOhms	22 kOhms	10 kOhms	22 kOhms	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms	47 kOhms	47 kOhms	22 kOhms	-	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V	68 @ 5mA, 5V	68 @ 5mA, 5V	56 @ 5mA, 5V	100 @ 1mA, 5V	100 @ 1mA, 5V	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	300mV @ 500µA, 10mA	300mV @ 500µA, 10mA	300mV @ 500µA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
Frequency - Transition	200 MHz	200 MHz	250 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Power - Max	300 mW	300 mW	300 mW	300 mW	300 mW	300 mW	300 mW
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3

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