onsemi-FJN4312RTA - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes | Izzition

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Part Number	FJN4312RTA	FJN4314RTA	FJN4313RTA	FJN3312RTA	FJN4302RTA	FJN4310RTA	FJN4311RTA
Manufacturer	onsemi	onsemi	onsemi	onsemi	Fairchild Semiconductor	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Active	Obsolete	Obsolete
Transistor Type	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased	NPN - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	40 V	50 V	50 V	40 V	50 V	40 V	40 V
Resistor - Base (R1)	47 kOhms	4.7 kOhms	2.2 kOhms	47 kOhms	10 kOhms	10 kOhms	22 kOhms
Resistor - Emitter Base (R2)	-	47 kOhms	47 kOhms	-	10 kOhms	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V	68 @ 5mA, 5V	68 @ 5mA, 5V	100 @ 1mA, 5V	30 @ 5mA, 5V	100 @ 1mA, 5V	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA	300mV @ 500µA, 10mA	300mV @ 500µA, 10mA	300mV @ 1mA, 10mA	300mV @ 500µA, 10mA	300mV @ 1mA, 10mA	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
Frequency - Transition	200 MHz	200 MHz	200 MHz	250 MHz	200 MHz	200 MHz	200 MHz
Power - Max	300 mW	300 mW	300 mW	300 mW	300 mW	300 mW	300 mW
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3

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