onsemi-FJI5603DTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	800 V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 200mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 400mA, 3V
Power - Max:	100 W
Frequency - Transition:	5MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)

onsemi FJI5603DTU