onsemi-FJD3305H1TM - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	4 A
Voltage - Collector Emitter Breakdown (Max):	400 V
Vce Saturation (Max) @ Ib, Ic:	1V @ 1A, 4A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	8 @ 2A, 5V
Power - Max:	1.1 W
Frequency - Transition:	4MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA

onsemi FJD3305H1TM