onsemi-FJBE2150DTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	800 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 330mA, 1A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 400mA, 3V
Power - Max:	110 W
Frequency - Transition:	5MHz
Operating Temperature:	-55°C ~ 125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263)

onsemi FJBE2150DTU