onsemi-FJA4213OTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FJA4213OTU	FJA4213RTU	FJA4313OTU	FJA4210OTU
Manufacturer	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active
Transistor Type	PNP	PNP	NPN	PNP
Current - Collector (Ic) (Max)	17 A	17 A	17 A	10 A
Voltage - Collector Emitter Breakdown (Max)	250 V	250 V	250 V	140 V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A	3V @ 800mA, 8A	3V @ 800mA, 8A	500mV @ 500mA, 5A
Current - Collector Cutoff (Max)	5µA (ICBO)	5µA (ICBO)	500nA (ICBO)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	55 @ 1A, 5V	55 @ 1A, 5V	35 @ 7A, 5V	70 @ 3A, 4V
Power - Max	130 W	130 W	130 W	100 W
Frequency - Transition	30MHz	30MHz	30MHz	30MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P	TO-3P	TO-3PN	TO-3P

onsemi FJA4213OTU

Transistor Type:	PNP
Current - Collector (Ic) (Max):	17 A
Voltage - Collector Emitter Breakdown (Max):	250 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 800mA, 8A
Current - Collector Cutoff (Max):	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	55 @ 1A, 5V
Power - Max:	130 W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P