onsemi-FJA4210RTU - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	FJA4210RTU	FJA4213RTU	FJAF4210RTU	FJA4210OTU
Manufacturer	onsemi	onsemi	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	10 A	17 A	10 A	10 A
Voltage - Collector Emitter Breakdown (Max)	140 V	250 V	140 V	140 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A	3V @ 800mA, 8A	500mV @ 500mA, 5A	500mV @ 500mA, 5A
Current - Collector Cutoff (Max)	10µA (ICBO)	5µA (ICBO)	10µA (ICBO)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 3A, 4V	55 @ 1A, 5V	50 @ 3A, 4V	70 @ 3A, 4V
Power - Max	100 W	130 W	80 W	100 W
Frequency - Transition	30MHz	30MHz	30MHz	30MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3PFM, SC-93-3	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P	TO-3P	TO-3PF-3	TO-3P

onsemi FJA4210RTU

Transistor Type:	PNP
Current - Collector (Ic) (Max):	10 A
Voltage - Collector Emitter Breakdown (Max):	140 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 500mA, 5A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 3A, 4V
Power - Max:	100 W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P