onsemi-FGY75T120SQDN - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	150 A
Current - Collector Pulsed (Icm):	300 A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 75A
Power - Max:	790 W
Switching Energy:	6.25mJ (on), 1.96mJ (off)
Input Type:	Standard
Gate Charge:	399 nC
Td (on/off) @ 25°C:	64ns/332ns
Test Condition:	600V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr):	99 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	TO-247-3

onsemi FGY75T120SQDN