onsemi-FGY60T120SQDN - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	120 A
Current - Collector Pulsed (Icm):	240 A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 60A
Power - Max:	517 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	311 nC
Td (on/off) @ 25°C:	52ns/296ns
Test Condition:	600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	TO-247-3

onsemi FGY60T120SQDN