onsemi-FGY100T65SCDT - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	200 A
Current - Collector Pulsed (Icm):	300 A
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 100A
Power - Max:	750 W
Switching Energy:	5.4mJ (on), 3.8mJ (off)
Input Type:	Standard
Gate Charge:	157 nC
Td (on/off) @ 25°C:	84ns/216ns
Test Condition:	400V, 100A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	62 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	TO-247-3

onsemi FGY100T65SCDT