onsemi-FGL60N100BNTDTU - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT and Trench
Voltage - Collector Emitter Breakdown (Max):	1000 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.9V @ 15V, 60A
Power - Max:	180 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	275 nC
Td (on/off) @ 25°C:	140ns/630ns
Test Condition:	600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr):	1.2 µs
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264-3

onsemi FGL60N100BNTDTU