onsemi-FGD3N60UNDF - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	6 A
Current - Collector Pulsed (Icm):	9 A
Vce(on) (Max) @ Vge, Ic:	2.52V @ 15V, 3A
Power - Max:	60 W
Switching Energy:	52µJ (on), 30µJ (off)
Input Type:	Standard
Gate Charge:	1.6 nC
Td (on/off) @ 25°C:	5.5ns/22ns
Test Condition:	400V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr):	21 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA

onsemi FGD3N60UNDF