onsemi-FGD3N60LSDTM-T - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	6 A
Current - Collector Pulsed (Icm):	25 A
Vce(on) (Max) @ Vge, Ic:	1.5V @ 10V, 3A
Power - Max:	40 W
Switching Energy:	250µJ (on), 1mJ (off)
Input Type:	Standard
Gate Charge:	12.5 nC
Td (on/off) @ 25°C:	40ns/600ns
Test Condition:	480V, 3A, 470Ohm, 10V
Reverse Recovery Time (trr):	234 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA

onsemi FGD3N60LSDTM-T