onsemi-FGA50N60LS - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	100 A
Current - Collector Pulsed (Icm):	150 A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 50A
Power - Max:	240 W
Switching Energy:	1.1mJ (on), 3.2mJ (off)
Input Type:	Standard
Gate Charge:	167 nC
Td (on/off) @ 25°C:	54ns/146ns
Test Condition:	300V, 50A, 5.9Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

onsemi FGA50N60LS