onsemi-FGA50N100BNTD2 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT and Trench
Voltage - Collector Emitter Breakdown (Max):	1000 V
Current - Collector (Ic) (Max):	50 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	2.9V @ 15V, 60A
Power - Max:	156 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	257 nC
Td (on/off) @ 25°C:	34ns/243ns
Test Condition:	600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):	75 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

onsemi FGA50N100BNTD2