FFSP3065B-F085
  • Share:

onsemi FFSP3065B-F085

Manufacturer No:
FFSP3065B-F085
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FFSP3065B-F085 Datasheet
ECAD Model:
-
Description:
SIC DIODE 650V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 30 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:1280pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$5.50
140

Please send RFQ , we will respond immediately.

Similar Products

Part Number FFSP3065B-F085 FFSB3065B-F085   FFSH3065B-F085   FFSP1065B-F085   FFSP2065B-F085  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 30A 73A (DC) 37A (DC) 10A 20A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 30 A 1.7 V @ 30 A 1.7 V @ 30 A 1.7 V @ 10 A 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 1280pF @ 1V, 100kHz 1280pF @ 1V, 100kHz 1260pF @ 1V, 100kHz 421pF @ 1V, 100kHz 866pF @ 1V, 100kHz
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 D²PAK (TO-263) TO-247-2 TO-220-2 TO-220-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

MBR1645
MBR1645
SMC Diode Solutions
DIODE SCHOTTKY 45V 16A TO220AC
SBR1045D1Q-13
SBR1045D1Q-13
Diodes Incorporated
DIODE SBR 45V 10A TO252
SBR1U200P1Q-7
SBR1U200P1Q-7
Diodes Incorporated
DIODE SBR 200V 1A POWERDI123
S3DB
S3DB
SMC Diode Solutions
DIODE GEN PURP 200V 3A SMB
VS-2EMH01HM3/5AT
VS-2EMH01HM3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A SMA
1N5407GP-E3/54
1N5407GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO201AD
1N1343RA
1N1343RA
Solid State Inc.
DO4 6 AMP SILICON RECTIFIER
VS-80SQ035
VS-80SQ035
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 8A DO204AR
SD253R04S15PV
SD253R04S15PV
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 250A DO205AB
RS2DHE3/52T
RS2DHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.5A DO214AA
RS1BL RTG
RS1BL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
RS1DL RQG
RS1DL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA

Related Product By Brand

MM3Z6V8C
MM3Z6V8C
onsemi
DIODE ZENER 6.8V 200MW SOD323F
MJD5731T4
MJD5731T4
onsemi
TRANS PNP 350V 1A DPAK
NTMD2P01R2G
NTMD2P01R2G
onsemi
MOSFET 2P-CH 16V 2.3A 8SOIC
FDD86380-F085
FDD86380-F085
onsemi
MOSFET N-CH 80V 50A DPAK
MMBFJ175LT3G
MMBFJ175LT3G
onsemi
JFET P-CH 30V 0.225W SOT23
NB6L14MNR2G
NB6L14MNR2G
onsemi
IC CLK BUFFER 1:4 3GHZ 16QFN
MC74VHC259DG
MC74VHC259DG
onsemi
IC LATCH/DECODER 8BIT ADD 16SOIC
NL7SZ18DFT2
NL7SZ18DFT2
onsemi
IC DEMUX 1 X 1:2 SC88/SC70-6
NCP1239JD65R2G
NCP1239JD65R2G
onsemi
IC OFFLINE SWITCH FLYBACK 7SOIC
SG6203SZ
SG6203SZ
onsemi
IC SYNCHRONOUS FRWRD CTRLR 8SOP
NCP803SN308T1
NCP803SN308T1
onsemi
IC SUPERVISOR 1 CHANNEL SOT23-3
CS5211EDR14G
CS5211EDR14G
onsemi
IC REG CTRLR BUCK 14SOIC