FFSP3065A
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onsemi FFSP3065A

Manufacturer No:
FFSP3065A
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
FFSP3065A Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 30A TO220-2
Delivery:
Payment:
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):30A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:1705pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSP3065A FFSP3065B   FFSH3065A   FFSP1065A   FFSP2065A  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 30A (DC) 30A 26A (DC) 15A (DC) 25A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 30 A 1.7 V @ 30 A - 1.75 V @ 10 A 1.75 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 1705pF @ 1V, 100kHz 1280pF @ 1V, 100kHz 1705pF @ 1V, 100kHz 575pF @ 1V, 100kHz 1085pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-247-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2L TO-220-2 TO-247-2 TO-220-2L TO-220-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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