FFSP3065A
  • Share:

onsemi FFSP3065A

Manufacturer No:
FFSP3065A
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
FFSP3065A Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 30A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):30A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:1705pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$8.42
73

Please send RFQ , we will respond immediately.

Similar Products

Part Number FFSP3065A FFSP3065B   FFSH3065A   FFSP1065A   FFSP2065A  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 30A (DC) 30A 26A (DC) 15A (DC) 25A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 30 A 1.7 V @ 30 A - 1.75 V @ 10 A 1.75 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 1705pF @ 1V, 100kHz 1280pF @ 1V, 100kHz 1705pF @ 1V, 100kHz 575pF @ 1V, 100kHz 1085pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-247-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2L TO-220-2 TO-247-2 TO-220-2L TO-220-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

RGP10J
RGP10J
onsemi
DIODE GEN PURP 600V 1A DO204AL
RS3G-13-F
RS3G-13-F
Diodes Incorporated
DIODE GEN PURP 400V 3A SMC
PU3DAH
PU3DAH
Taiwan Semiconductor Corporation
25NS, 3A, 200V, ULTRA FAST RECOV
BAS21/DG/B3215
BAS21/DG/B3215
NXP USA Inc.
RECTIFIER DIODE, 0.2A, 250V
MUR160SH
MUR160SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AA
JANTX1N6622/TR
JANTX1N6622/TR
Microchip Technology
RECTIFIER UFR,FRR
D4201N20TXPSA1
D4201N20TXPSA1
Infineon Technologies
DIODE GEN PURP 2KV 6010A
SRP300J/1
SRP300J/1
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
MURA215T3
MURA215T3
onsemi
DIODE ULTRA FAST 2A 150V SMA
MBRB1650-E3/81
MBRB1650-E3/81
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 16A TO263AB
HS5K R7G
HS5K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
RF505B6STL
RF505B6STL
Rohm Semiconductor
DIODE GEN PURP 600V 5A CPD

Related Product By Brand

MMBD355LT1G
MMBD355LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
MMSZ4683T1
MMSZ4683T1
onsemi
DIODE ZENER 3V 500MW SOD123
NSTB1002DXV5T1G
NSTB1002DXV5T1G
onsemi
TRANS PREBIAS 1NPN 1PNP SOT553
BC337-16ZL1
BC337-16ZL1
onsemi
TRANS NPN 45V 0.8A TO92
5LP01M-TL-HX
5LP01M-TL-HX
onsemi
MOSFET P-CH 50V 0.07A 3MCP
NE5532D8R2
NE5532D8R2
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
74HCT32DR2G
74HCT32DR2G
onsemi
IC GATE OR 4CH 2-INP 14SOIC
NLV74LVX573DTR2G
NLV74LVX573DTR2G
onsemi
IC OCTAL NONINVERT CMOS 20TSSOP
NLV14099BDWR2G
NLV14099BDWR2G
onsemi
IC LATCH 8BIT 16SOIC
MC33342DR2G
MC33342DR2G
onsemi
IC BATT CHG MULTI-CHEM 8SOIC
NCP5663DS15R4G
NCP5663DS15R4G
onsemi
IC REG LINEAR 1.5V 3A D2PAK-5
KAI-1020-CBA-FD-BA
KAI-1020-CBA-FD-BA
onsemi
IMAGE SENSOR CCD 1MP 64CLCC