FFSP2065B-F085
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onsemi FFSP2065B-F085

Manufacturer No:
FFSP2065B-F085
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FFSP2065B-F085 Datasheet
ECAD Model:
-
Description:
SIC DIODE 650V
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:866pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSP2065B-F085 FFSP3065B-F085   FFSB2065B-F085   FFSH2065B-F085   FFSP1065B-F085  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 20A 30A 20A 20A 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 20 A 1.7 V @ 30 A 1.7 V @ 20 A 1.7 V @ 20 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 866pF @ 1V, 100kHz 1280pF @ 1V, 100kHz 866pF @ 1V, 100kHz 866pF @ 1V, 100kHz 421pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 D²PAK-3 (TO-263-3) TO-247-2 TO-220-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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