FFSP1665A
  • Share:

onsemi FFSP1665A

Manufacturer No:
FFSP1665A
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
FFSP1665A Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 16A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):16A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 16 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:887pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$3.38
121

Please send RFQ , we will respond immediately.

Similar Products

Part Number FFSP1665A FFSH1665A   FFSP0665A   FFSP1065A   FFSP1265A  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 16A (DC) 23A (DC) 8.8A (DC) 15A (DC) 15A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 16 A - 1.75 V @ 6 A 1.75 V @ 10 A 1.75 V @ 12 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 887pF @ 1V, 100kHz 887pF @ 1V, 100kHz 361pF @ 1V, 100kHz 575pF @ 1V, 100kHz 665pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-247-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-247-2 TO-220-2L TO-220-2L TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N645
1N645
NTE Electronics, Inc
D-SI 225V .4A
VS-1ENH01HM3/84A
VS-1ENH01HM3/84A
Vishay General Semiconductor - Diodes Division
FRED PT RECTIFIER AEC-Q101 SMP
MMBD4448_R1_00001
MMBD4448_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
VSS8D2M6-M3/H
VSS8D2M6-M3/H
Vishay General Semiconductor - Diodes Division
2A, 60V, SLIMSMAW TRENCH SKY REC
ES3C-M3/57T
ES3C-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A DO214AB
H1D-F1-0000HF
H1D-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A SOD123FL
VS-30ETH06SPBF
VS-30ETH06SPBF
Vishay General Semiconductor - Diodes Division
DIODE ULTRA FAST 600V 30A D2PAK
FGP30C-E3/54
FGP30C-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 3A DO204AC
MPG06JHE3/54
MPG06JHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MPG06
HS1JL RUG
HS1JL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
UH2B-M3/5BT
UH2B-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2A SMA
RB520HS-30T15R
RB520HS-30T15R
Rohm Semiconductor
DIODE SCHOTTKY 30V SMD0603B

Related Product By Brand

ESDM1131MX4T5G
ESDM1131MX4T5G
onsemi
TVS DIODE 3.3VWM 5.6VC 2X4DFN
UESD3.3ST5G
UESD3.3ST5G
onsemi
TVS DIODE 3.3VWM 10.9VC SOD723
NP0640SAMCT3G
NP0640SAMCT3G
onsemi
THYRISTOR 58V 150A DO214AA
NCN5150QFNGEVB
NCN5150QFNGEVB
onsemi
EVAL BOARD NCN5150QFNG
LA6500-MDB-E
LA6500-MDB-E
onsemi
IC POWER 1 CIRCUIT TO220-5H
MC74ACT04M
MC74ACT04M
onsemi
INVERTER, ACT SERIES, 6-FUNC
MC74LVX259DG
MC74LVX259DG
onsemi
IC LATCH AADDRESS 8BIT 16-SOIC
CAT28C64BNI12
CAT28C64BNI12
onsemi
IC EEPROM 64KBIT PARALLEL 32PLCC
NCP12400CBBAB0DR2G
NCP12400CBBAB0DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 7SOIC
CAT8801MTB-GT3
CAT8801MTB-GT3
onsemi
IC SUPERVISOR 1 CHANNEL SOT23-3
NCP717CMX190TCG
NCP717CMX190TCG
onsemi
IC REG LINEAR 1.9V 300MA 4XDFN
F5D2
F5D2
onsemi
EMITTER IR 880NM 100MA TO-46