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| Part Number | FFSM0865B | FFSP0865B | FFSB0865B | FFSD0865B | FFSM0665B | FFSM0865A |
|---|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | onsemi | onsemi | onsemi |
| Product Status | Active | Active | Active | Active | Active | Active |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 11.6A (DC) | 10.1A (DC) | 10.1A (DC) | 11.6A (DC) | 9.1A (DC) | 9.6A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A | 1.7 V @ 8 A | 1.7 V @ 8 A | 1.7 V @ 8 A | 1.7 V @ 6 A | 1.75 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | - | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V | 40 µA @ 650 V | 40 µA @ 650 V | 40 µA @ 650 V | 40 µA @ 650 V | 200 µA @ 650 V |
| Capacitance @ Vr, F | 336pF @ 1V, 100kHz | 336pF @ 1V, 100kHz | 336pF @ 1V, 100kHz | 336pF @ 1V, 100kHz | 259pF @ 1V, 100kHz | 463pF @ 1V, 100kHz |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 4-PowerTSFN | TO-220-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4-PowerTSFN | 4-PowerTSFN |
| Supplier Device Package | 4-PQFN (8x8) | TO-220-2 | D²PAK-2 (TO-263-2) | D-PAK (TO-252) | 4-PQFN (8x8) | 4-PQFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
