FFSH3065A
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onsemi FFSH3065A

Manufacturer No:
FFSH3065A
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FFSH3065A Datasheet
ECAD Model:
-
Description:
650V 30A SIC SBD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):26A (DC)
Voltage - Forward (Vf) (Max) @ If:- 
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 650 V
Capacitance @ Vr, F:1705pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSH3065A FFSH3065B   FFSH5065A   FFSP3065A   FFSH4065A   FFSH2065A  
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky - Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V - 650 V 650 V 650 V
Current - Average Rectified (Io) 26A (DC) 37A (DC) - 30A (DC) 48A (DC) 25A (DC)
Voltage - Forward (Vf) (Max) @ If - 1.7 V @ 30 A - 1.75 V @ 30 A - -
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns - - 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V 40 µA @ 650 V - 200 µA @ 650 V 200 µA @ 650 V 200 µA @ 650 V
Capacitance @ Vr, F 1705pF @ 1V, 100kHz 1260pF @ 1V, 100kHz - 1705pF @ 1V, 100kHz 1989pf @ 1V, 100kHz 1085pF @ 1V, 100kHz
Mounting Type Through Hole Through Hole - Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 - TO-220-2 TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2 - TO-220-2L TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C - -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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