FFSH30120A
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onsemi FFSH30120A

Manufacturer No:
FFSH30120A
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FFSH30120A Datasheet
ECAD Model:
-
Description:
1200V 30A SIC SBD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):46A (DC)
Voltage - Forward (Vf) (Max) @ If:- 
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:1740pF @ 1V, 100kHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSH30120A FFSH50120A   FFSH40120A   FFSH10120A   FFSH20120A  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 46A (DC) 77A (DC) 61A (DC) 17A (DC) 30A (DC)
Voltage - Forward (Vf) (Max) @ If - - - 1.75 V @ 10 A 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 1740pF @ 1V, 100kHz 2560pF @ 1V, 100kHz 2250pF @ 1V, 100kHz 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-2 TO-247-2 TO-247-2 TO-247-2 TO-247-2
Supplier Device Package TO-247-2 TO-247-2 TO-247-2 TO-247-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -

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