FFSD1065B-F085
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onsemi FFSD1065B-F085

Manufacturer No:
FFSD1065B-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FFSD1065B-F085 Datasheet
ECAD Model:
-
Description:
650V 10A SIC SBD GEN1.5
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):13.5A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:424pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:D-PAK (TO-252)
Operating Temperature - Junction:-55°C ~ 175°C
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In Stock

$6.12
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Similar Products

Part Number FFSD1065B-F085 FFSH1065B-F085   FFSP1065B-F085   FFSB1065B-F085  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 13.5A (DC) 11.5A (DC) 10A 27A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A - 1.7 V @ 10 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F 424pF @ 1V, 100kHz 421pF @ 1V, 100kHz 421pF @ 1V, 100kHz 421pF @ 1V, 100kHz
Mounting Type Surface Mount Through Hole Through Hole Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-247-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D-PAK (TO-252) TO-247-2 TO-220-2 D²PAK (TO-263)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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