onsemi-FDZ191P_P - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	85mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 10 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	800 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.9W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-WLCSP (1x1.5)
Package / Case:	6-UFBGA, WLCSP

onsemi FDZ191P_P