onsemi-FDWS9510L-F085 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	37 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	2320 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	75W (Tj)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-DFN (5.1x6.3)
Package / Case:	8-PowerTDFN

onsemi FDWS9510L-F085