FDT86106LZ
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onsemi FDT86106LZ

Manufacturer No:
FDT86106LZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDT86106LZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 3.2A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:108mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number FDT86106LZ FDT86102LZ  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 108mOhm @ 3.2A, 10V 28mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 50 V 1490 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta) 2.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-4 SOT-223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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